Transistor with shallow germanium implantation region in channel

ABSTRACT

A transistor and a structure thereof, wherein a very shallow region having a high dopant concentration of germanium is implanted into a channel region of a transistor at a low energy level, forming an amorphous germanium implantation region in a top surface of the workpiece, and forming a crystalline germanium implantation region beneath the amorphous germanium implantation region. The workpiece is annealed using a low-temperature anneal to convert the amorphous germanium region to a crystalline state while preventing a substantial amount of diffusion of germanium further into the workpiece, also removing damage to the workpiece caused by the implantation process. The resulting structure includes a crystalline germanium implantation region at the top surface of a channel, comprising a depth below the top surface of the workpiece of about 120 Å or less. The transistor has increased mobility and a reduced effective oxide thickness (EOT).

This application is a continuation of patent application Ser. No.10/805,720, entitled “Transistor with Shallow Germanium ImplantationRegion in Channel,” filed on Mar. 22, 2004, now U.S. Pat. No. 7,094,671which application is incorporated herein by reference.

CROSS-REFERENCE TO RELATED APPLICATIONS

This patent application relates to the following commonly assignedpatents: U.S. Pat. No. 7,005,333, filed on Dec. 30, 2003, issued on Feb.8, 2006 entitled, “Transistor with Silicon and Carbon Layer in theChannel Region;” and U.S. Pat. No. 7,002,224, filed on Feb. 3, 2004,issued on Feb. 1, 2006 entitled, “Transistor with Doped GateDielectric,” which patents are hereby incorporated herein by reference.

TECHNICAL FIELD

The present invention relates generally to semiconductor devices, andmore particularly to a method of fabricating a transistor and astructure thereof.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment, as examples. A transistor is an element that isutilized extensively in semiconductor devices. There may be millions oftransistors on a single integrated circuit (IC), for example. A commontype of transistor used in semiconductor device fabrication is a metaloxide semiconductor field effect transistor (MOSFET).

The gate dielectric for MOSFET devices has in the past typicallycomprised silicon dioxide, which typically has a dielectric constant of3.9. However, as devices are scaled down in size, using silicon dioxidefor a gate dielectric becomes a problem because of gate leakage current,which can degrade device performance. Therefore, there is a trend in theindustry towards the development of the use of high dielectric constant(k) materials for use as the gate dielectric in MOSFET devices. The term“high k materials” as used herein refers to a dielectric material havinga dielectric constant of 4.0 or greater.

High k gate dielectric development has been identified as one of thefuture challenges in the 2003 edition of International TechnologyRoadmap for Semiconductors (ITRS), incorporated herein by reference,which identifies the technological challenges and needs facing thesemiconductor industry over the next 15 years. For low power logic (forportable electronic applications, for example), it is important to usedevices having low leakage current, in order to extend battery life.Gate leakage current must be controlled in low power applications, aswell as sub-threshold leakage, junction leakage, and band-to-bandtunneling. For high performance (namely, high speed) applications, it isimportant to have a low sheet resistance and a minimal effective gateoxide thickness.

To fully realize the benefits of transistor scaling, the gate oxidethickness needs to be scaled down to less than 2 nm. However, theresulting gate leakage current makes the use of such thin oxidesimpractical in many device applications where low standby powerconsumption is required. For this reason, the gate oxide dielectricmaterial will eventually be replaced by an alternative dielectricmaterial that has a higher dielectric constant. However, deviceperformance using high k dielectric materials tends to suffer fromtrapped charge in the dielectric layer, which deteriorates the mobility,making the drive current lower than in transistors having silicondioxide gate oxides, thus reducing the speed and performance oftransistors having high k gate dielectric materials.

FIG. 1 shows a cross-sectional view of a prior art semiconductor device100 comprising a transistor with a high k gate dielectric material. Thesemiconductor device 100 includes field oxide regions 104 formed in aworkpiece 102. The transistor includes a source S and a drain D that areseparated by a channel region C. The transistor includes a gatedielectric 108 that comprises a high k insulating material. A gate 110is formed over the gate dielectric 108, as shown.

After the gate 110 is formed, the source region S and drain region D arelightly doped, e.g., by a lightly doped drain (LDD) implant, to formextension regions 120 of the source S and drain D. Insulating spacers112 are then formed along the sidewalls of the gate 110 and gatedielectric 108, and a source/drain implant is performed on exposedsurfaces of the workpiece 102, followed by a high temperature thermalanneal, typically at temperatures of about 1000 to 1050° C., to form thesource S and drain D.

A problem with the prior art semiconductor device 100 shown in FIG. 1 isthat an interfacial oxide 114 is formed between the workpiece 102 andthe high k dielectric 108, and an interfacial oxide 116 is formedbetween the high k dielectric 108 and the gate 110. The interfacialoxides 114 and 116 form because the workpiece 102 typically comprisessilicon, which has a strong tendency to form silicon dioxide (SiO₂) inthe presence of oxygen, during the deposition of the high k gatedielectric 108, for example, forming interfacial oxide 114. Likewise,the gate 110 often comprises polysilicon, which also tends to form aninterfacial oxide 116 comprising SiO₂ on the top surface of the high kgate dielectric 108.

The source S and drain D regions of the semiconductor device 100 may bemade to extend deeper within the workpiece 102 by implanting ions of adopant species, and annealing the workpiece 102 to cause diffusion ofthe dopant deep within the workpiece 102, forming the source S and drainD regions. Another problem with the prior art structure 100 is that thehigh temperature anneal processes used to form the source S and drain Dtend to degrade the dielectric constant of the high k gate dielectric108. In particular, when exposed to a high temperature treatment, theinterfacial oxides 114 and 116 become thicker, increasing the effectiveoxide thickness (EOT) 118 evaluated electrically from the entire gatestack (the interfacial oxide 114, high k dielectric 108 and interfacialoxide 116) of the semiconductor device 100. Thus, by using a high kdielectric material for the gate dielectric 108, it can be difficult todecrease the gate dielectric 108 thickness to a dimension required forthe transistor design, as devices 100 are scaled down in size.

Therefore, what is needed in the art is a transistor design andfabrication method having a high k dielectric material, wherein theeffective gate dielectric thickness is reduced.

Another challenge in the scaling of transistors is increasing themobility in the channel region, which increases the speed of the device.Thus, what is also needed in the art is a transistor design andfabrication method wherein mobility in the channel region is increased.

SUMMARY OF THE INVENTION

These and other problems are generally solved or circumvented, andtechnical advantages are generally achieved, by preferred embodiments ofthe present invention, which includes a transistor and method offabrication thereof, having a channel region with a very shallow highconcentration of germanium implanted therein. A low-temperature annealprocess is used to re-crystallize the germanium implantation region inthe channel region and eliminate defects or damage caused by theimplantation process. A gate dielectric material is formed over thechannel region, before or after the low-temperature anneal process, anda gate is formed over the high-k gate dielectric. Source and drainregions are formed by implanting dopants and using a low-temperatureanneal process to drive in the dopants. Due to the presence of a highconcentration of germanium at the top surface of the channel, andbecause of the low-temperature anneal processes used in accordance withembodiments of the present invention, the effective oxide thickness ofthe gate dielectric is kept to a minimum, resulting in a thinnereffective gate dielectric (or oxide) thickness. The implanted germaniumalso increases the mobility of the channel region due to the strain inthe channel region caused by the size misfit between silicon atoms andgermanium atoms. For example, germanium atoms are larger than siliconatoms, so when germanium is introduced into a silicon atomic latticestructure, the larger germanium atoms create stress in the atomicstructure in the channel region.

In accordance with a preferred embodiment of the present invention, atransistor includes a workpiece, the workpiece comprising a top surface,and a crystalline implantation region disposed within the workpiece, theimplantation region comprising germanium, wherein the crystallineimplantation region extends within the workpiece from the top surface ofthe workpiece by about 120 Å or less. A gate dielectric is disposed overthe implantation region, and a gate is disposed over the gatedielectric. The transistor includes a source region and a drain regionformed in at least the crystalline implantation region within theworkpiece.

In accordance with another preferred embodiment of the presentinvention, a method of fabricating a transistor includes providing aworkpiece, the workpiece having a top surface, and implanting germaniuminto the top surface of the workpiece, forming a firstgermanium-containing region within the top surface of the workpiece andforming a second germanium-containing region beneath the firstgermanium-containing region. The first germanium-containing regionextends a first depth beneath the workpiece top surface, and the secondgermanium-containing region extends a second depth below the firstdepth. The first and second depth comprise about 100 Å or less below thetop surface of the workpiece. The method includes depositing a gatedielectric material over the first germanium-containing region,depositing a gate material over the gate dielectric material, andpatterning the gate material and gate dielectric material to form a gateand a gate dielectric over the first germanium-containing region. Asource region and a drain region are formed in at least the firstgermanium-containing region.

In accordance with yet another preferred embodiment of the presentinvention, a method of fabricating a transistor includes providing aworkpiece, the workpiece having a top surface, and implanting germaniuminto the top surface of the workpiece, forming an amorphousgermanium-containing region within the top surface of the workpiece, theamorphous germanium-containing region extending about 45 Å or lessbeneath the workpiece top surface, and also forming a first crystallinegermanium-containing region beneath the amorphous germanium-containingregion, the first crystalline germanium-containing region extendingabout 55 Å or less beneath the amorphous germanium-containing region. Agate dielectric material is deposited over the amorphousgermanium-containing region, the gate dielectric material having adielectric constant of about 4.0 or greater. The workpiece is annealedat a temperature of about 750° C. or less for about 60 minutes or less,re-crystallizing the amorphous germanium-containing region and forming asingle second crystalline germanium-containing region within the topsurface of the workpiece, the single second crystallinegermanium-containing region comprising the re-crystallized amorphousgermanium-containing region and the first crystallinegermanium-containing region, the second crystalline germanium-containingregion extending about 120 Å or less beneath the workpiece top surface.A gate material is deposited over the gate dielectric material, and thegate material and the gate dielectric material are patterned to form agate and a gate dielectric over the second crystallinegermanium-containing region. A source region and a drain region areformed in at least the second crystalline germanium-containing region.

Advantages of preferred embodiments of the present invention includeproviding a transistor design and manufacturing method thereof, whereinthe total anneal temperature for the transistor manufacturing processflow is reduced, reducing the thermal budget and improving the gatedielectric quality. Because of the presence of germanium in theworkpiece, and because the anneal process to re-crystallize theamorphous germanium-containing region comprises a low temperature, theeffective gate oxide thickness is kept to a minimum. The germanium inthe channel region increases the mobility of holes and electrons in thechannel region, resulting in a transistor device with a faster responsetime and increased drive current.

The foregoing has outlined rather broadly the features and technicaladvantages of embodiments of the present invention in order that thedetailed description of the invention that follows may be betterunderstood. Additional features and advantages of embodiments of theinvention will be described hereinafter, which form the subject of theclaims of the invention. It should be appreciated by those skilled inthe art that the conception and specific embodiments disclosed may bereadily utilized as a basis for modifying or designing other structuresor processes for carrying out the same purposes of the presentinvention. It should also be realized by those skilled in the art thatsuch equivalent constructions do not depart from the spirit and scope ofthe invention as set forth in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 shows a cross-sectional view of a prior art transistor;

FIGS. 2 through 5 show cross-sectional views of a transistor at variousstages of manufacturing in accordance with a preferred embodiment of thepresent invention, with FIG. 3 being an enlarged view of the channelregion in FIG. 2, wherein a channel region of a transistor is implantedat a low energy with a high concentration of germanium, followed by alow temperature anneal process; and

FIGS. 6 through 8 show cross-sectional views of another embodiment ofthe present invention, wherein the gate dielectric material is depositedbefore the low temperature anneal to re-crystallize the amorphousgermanium-containing region at the top surface of the workpiece, andwherein FIG. 7 is an enlarged view of the channel region shown in FIG.6.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the preferredembodiments and are not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

The present invention will be described with respect to preferredembodiments in a specific context, namely a transistor formed on asemiconductor device. The invention may also be applied, however, toMOSFETs or other transistor devices, including p channel metal oxidesemiconductor (PMOS) transistors, n channel metal oxide semiconductor(NMOS) transistors, and/or complimentary metal oxide semiconductor(CMOS) devices, as examples. Only one transistor is shown in each of thefigures; however, there may be many other transistors and devices formedin the manufacturing process for the semiconductor devices shown.

The use of germanium in a channel region of a transistor is desired,because germanium creates strain in the channel due to the latticemis-match between silicon and germanium, having a potential to increasethe mobility of holes and electrons in a transistor. However, there havebeen problems and challenges in introducing germanium into channelregions of transistors, which will be discussed next herein.

Introducing germanium into a channel region by epitaxial growth of Siand Ge is disclosed in commonly assigned U.S. patent application Ser.No. 10/748,995, filed on Dec. 30, 2003, entitled “Transistor withSilicon and Carbon Layer in the Channel Region,” which is incorporatedherein by reference. However, growing an epitaxial layer in the channelregion requires an additional deposition step in the manufacturingprocess flow of a transistor, which increases the manufacturing costs,and is thus undesirable.

Attempts have been made in the past to implant germanium into thechannel region of a transistor. However, implanting germanium in asubstrate results in defects being formed, which causes leakage currentin the transistor. In the past, the implantation of germanium was at anenergy level of 30 keV to 200 keV with dose ranges from 1×10¹⁵ to 1×10¹⁷atoms/cm², resulting in (after thermal processing) a final channelcomposition of SiGe_(x) with x<0.16. According to Plummer et al. inSilicon VLSE Technology, Fundamentals, Practice and Modeling, 2000,Prentice Hall, Upper Saddle River, N.J., at p. 453, which isincorporated herein by reference, the distribution of the implanted ionsis often modeled to the first order by a Gaussian distribution given byEquation 1, below.

${{{{Equation}\mspace{20mu} 1\text{:}\mspace{650mu}{C(x)}} = {C_{p}{\exp( {- \frac{( {x - R_{p}} )^{2}}{2\Delta\; R_{p}^{2}}} )}}};}\mspace{239mu}$where R_(p) is the average projected range normal to the surface, ΔR_(p)is the standard deviation or straggle about that range, and C_(p) is thepeak concentration where the Gaussian is centered. In general, the peakconcentration, C_(p), is inverse proportional to the straggle, ΔR_(p),and the R_(p) and ΔR_(p) are monotonically changed with the implantenergy. To implant Ge with the previous mentioned energy range, the(R_(p), ΔR_(p)) range from (255 Å, 55 Å) to (1233 Å, 322 Å). Thisimplantation of germanium causes damage to the substrate, creatingleakage paths in the channel region, and causing high drain to substrateleakage current, low breakdown voltages and reduced drain current forthe transistor. In addition, end-of-range (EOR) defects form below anamorphous/crystalline interface after the implant, and those defects aredifficult to anneal out, even using a higher temperature process. Thesedefects will cause source to drain leakage and “off state” leakage inthe channel region of a transistor, degrading device performance.

As mentioned above, by having Ge in the Si lattice, forming a SiGe_(x)layer, channel mobility will be increased. The higher the Ge content,the higher the mobility improvement. To increase the Ge content in thisimplant scheme, either the energy of the implant needs to be decreased,or dose of the implant needs to be increased. However, in a lower energyconditions, the depth of the EOR will be also shallower and close to theactive channel region, which will make the leakage problem more severe.

Because the end-of-range defects cannot be easily removed, attempts havebeen made to lower the amorphous/crystalline interface deeper into thesubstrate, e.g., to a depth of 1 μm or greater, in an attempt to avoidincreasing the leakage current. That process requires an even largerimplant energy (500 keV or larger) and because more complex defects aregenerated near the surface, makes this process not effective. Therefore,this implant scheme to form a SiGe_(x) layer is not preferable insemiconductor industry, and instead, the mainstream technique ofintroducing germanium into a channel region is by using a CVD (ChemicalVapor Deposition) method to deposit SiGe_(x) on top of a Si substrate.

In a paper entitled, “Surface Proximity Effect on End-of Range Damage ofLow Energy Ge Implantation” by King et al., presented at the UltraShallow Junctions (USJ) 2003 Conference, pp. 447-450, which isincorporated herein by reference, germanium was implanted into a siliconsubstrate using an energy of 10 keV at a concentration of 1×10¹⁵atoms/cm², and a portion of the implanted germanium layer wasmechanically thinned by lapping. According to the authors, a lappedsubstrate having an amorphous/crystalline interface at a depth of 45 Åresulted in no end-of-range defects being formed during an annealprocess. The surface proximity, e.g., implanting the germanium at adepth close to the surface of the substrate, resulted in subsequentannihilation of defects upon annealing.

Embodiments of the present invention achieve technical advantages byproviding a novel method of manufacturing a transistor, wherein a veryshallow region of germanium is introduced into a channel region of atransistor, without requiring an additional deposition or epitaxialgrowth process, and also avoiding increasing the leakage current of thetransistor. Germanium is implanted in a shallow top region of aworkpiece in a channel region of the transistor, at a depth of about 45Å or less. The germanium is implanted using a low energy level and at ahigh concentration dose, creating an initially amorphous region ofgermanium, after the implant. The amorphous germanium implantationregion is annealed using a low-temperature anneal to convert theamorphous germanium region implanted to a crystalline state whilepreventing a substantial amount of diffusion of germanium further intothe workpiece, and also removing damage to the workpiece that may havebeen caused by the low energy, high dopant concentration shallowimplant. The resulting structure includes a crystalline germaniumimplantation region at the top surface of a channel, comprising a depthbelow the top surface of the workpiece of about 120 Å or less. Aninterfacial oxide formed between the germanium-implanted workpiece andthe gate dielectric has a minimal thickness, resulting in a lowerelectrical effective gate oxide thickness (EOT). The shallow germaniumregion in the channel of the transistor increases the hole and electronmobility.

FIGS. 2 through 5 show cross-sectional views of a preferred embodimentof the present invention at various stages of manufacturing. Referringfirst to FIG. 2, a semiconductor device 200 comprises a workpiece 202.The workpiece 202 may include a semiconductor substrate comprisingsilicon or other semiconductor materials covered by an insulating layer,for example. The workpiece 202 may also include other active componentsor circuits, not shown. The workpiece 202 may comprise silicon oxideover single-crystal silicon, for example. The workpiece 202 may includeother conductive layers or other semiconductor elements, e.g.,transistors, diodes, etc. The workpiece 202 may also comprise asilicon-on-insulator (SOI) substrate, for example.

The workpiece 202 may be lightly doped (not shown). In general, theworkpiece 202 is doped with the either N or P type dopants, depending onwhether the junctions of the transistor to be formed will be P or Ntype, respectively. For example, if the transistors to be manufacturedcomprise PMOS transistors, the workpiece 202 may be lightly doped with Ntype dopants. Or, if NMOS transistors will be formed, the workpiece 202may be lightly doped with P type dopants.

Isolation regions 204 may be formed in various locations on theworkpiece 202, as shown. The isolation regions 204 may comprise shallowtrench isolation (STI) regions or field oxide regions that are disposedon either side of a channel region C of a transistor 250 (not shown inFIG. 2; see FIG. 5), for example. The isolation regions 204 may beformed by depositing a photoresist over the workpiece 202, not shown.The photoresist may be patterned using lithography techniques, and thephotoresist may be used as a mask while the workpiece 202 is etched toform holes or patterns for the isolation regions 204 in a top surface ofthe workpiece 202. An insulator such as an oxide, for example, may bedeposited over the workpiece 202 to fill the patterns, forming isolationregions 204. Alternatively, the isolation regions 204 may be formed byother methods and may comprise other insulating materials, for example.

Note that if PMOS and NMOS transistors (not shown) are to bemanufactured on the same workpiece 202, the workpiece 202 may be lightlydoped with P type dopants, the NMOS portions of the workpiece 202 may bemasked, and well implants may then be formed to create N wells for thePMOS devices. P type implants may then be implanted into the NMOSportions.

The exposed portions of the workpiece 202 are subjected to a pre-gatecleaning process to remove any native oxides or other debris orcontaminants from the top surface of the workpiece 202. The pre-gatetreatment may comprise a HF, HCl or ozone based cleaning treatment, asexamples, although the pre-gate treatment may alternatively compriseother chemistries.

Next, germanium is implanted into a shallow top region of the exposedregions of the workpiece 202, in particular in a channel region C of atransistor, as shown in FIG. 2. Germanium atoms are preferably implantedusing a low energy implant, preferably at an energy level of about 5 keVor less for a time period of about 3 to 30 minutes per wafer orworkpiece (for example, in a batch tool that handles X number of wafers,the time period for the low energy implant would be (3 to 30minutes)×X). The implantation dose is preferably targeted at the surface232 of the workpiece 202, and comprises a high dose, preferably about1×10¹⁵ to 1×10¹⁷ atoms/cm² of germanium, for example.

The germanium implantation step results in the formation of an amorphousgermanium implantation region 230 (also referred to herein as anamorphous germanium-containing region) proximate the top surface 232 ofthe workpiece 202, and a crystalline germanium implantation region 236(also referred to herein as a crystalline germanium-containing region)disposed beneath the amorphous germanium implantation region 230. Theamorphous germanium implantation region 230 preferably comprises a depthd₁ of about 45 Å or less beneath the top surface 232 of the workpiece202, for example. The crystalline germanium implantation region 236preferably comprises a depth d₂ of about 55 Å or less beneath theamorphous germanium implantation region 230. The total depth d₃ of thecrystalline germanium implantation region 236 and the amorphousgermanium implantation region 230 preferably comprises a depth of about100 Å or less, for example.

The amorphous germanium implantation region 230 and the crystallinegermanium implantation region 236 may be separated by a damage region234 as a result of the implantation process. Implantation involvesbombardment of the workpiece 202 by atoms (in this case, germaniumatoms), which can result in physical damage within the workpiece 202.Because the damage region 234 is located close to the top surface 232 ofthe workpiece 202, the damage region 234 will be repaired or annihilatedin a subsequent low-temperature anneal step, to be described furtherherein.

The germanium implantation process results in a Gaussian distribution(e.g., a distribution appearing similar to one side of a Bell curve) ofgermanium ions implanted within the top surface 232 of the workpiece202, as shown in greater detail in FIG. 3. The concentration ofgermanium is preferably higher at an upper level 230 a than at eachsubsequent lower level 230 b, 230 c, 230 d, 236 a, 236 b beneath the topsurface 232 of the workpiece 202. The concentration of germanium in atop portion 230 near the top surface 232 of the workpiece 202 maycomprise about 50% or greater of germanium and about 50% or less ofsilicon, as an example. The dopant concentration of germanium at upperportions of the amorphous germanium implantation region 230 a and 230 bmay comprise on the order of about 1×10¹⁸ to 5×10²³ atoms/cm³, asexamples. The dopant concentration of germanium at lower portions of thecrystalline germanium implantation region 236 b may comprise aconcentration of about 1×10¹⁷ or less, for example. The dopantconcentration of germanium after the low energy shallow implantpreferably results in the highest concentration of germanium dopantsnear the top surface 232 of the workpiece 202, with the germanium dopantconcentration being gradually less extending downward through theworkpiece 202.

In one embodiment, the top portion 230 a of the amorphous germaniumimplantation region preferably comprises substantially 100% germanium.This embodiment is particularly effective in reducing the electricaleffective oxide thickness of the transistor, to be described furtherherein.

Note that preferably, a sacrificial oxide is not deposited over theworkpiece 202 before implanting the germanium, as is sometimes used inion implantation processes. By not using a sacrificial oxide, a higherconcentration of germanium may be implanted, in accordance withpreferred embodiments of the present invention. In particular, higherconcentrations of germanium may be implanted at low energy levels of 5keV or less, if a sacrificial oxide is not used. Using a sacrificialoxide would require a higher energy level to achieve the germaniumimplantation, and a low energy level implant is desired to achieve theshallow implant of about 100 Å or less.

Furthermore, in accordance with embodiments of the present invention,the workpiece 202 is preferably not exposed to a temperature of overabout 938.3° C. after the germanium is implanted into the shallow topregion of the workpiece 202, which is the melting point of germanium.Heating the workpiece 202 to a temperature over about 938.3° C. woulddeleteriously affect the transistor performance. Furthermore, preferablythe workpiece 202 is not heated to a temperature of greater than about750° C. for extended periods of time after the germanium implant andbefore the gate dielectric material deposition, to avoid causingexcessive diffusion of germanium further into the workpiece 202.

Next, the workpiece 202 is subjected to a low temperature annealprocess, e.g., at a temperature of about 750° C. or less for about 60minutes or less, for example. The low temperature anneal process maycomprise a solid phase epitaxial regrowth (SPER) process, for example.The low temperature anneal process causes the amorphous germaniumimplantation region 230 to re-crystallize (e.g., the top region of theworkpiece where the amorphous germanium implantation region 230 nowresides was crystalline prior to the implantation of the germanium), andalso repairs the damaged region 234, resulting in a single crystallinegermanium implantation region 238 having a depth d₄ beneath the topsurface 232 of the workpiece, as shown in FIG. 4. The single crystallinegermanium implantation region 238 comprises the re-crystallizedamorphous germanium implantation region 230 and the crystallinegermanium implantation region 236. The total depth d₃ of the amorphousgermanium-containing region 230 and crystalline germanium-containingregion 236 of FIG. 2 may be increased by about 20 Å or less to a depthd₄ of about 120 Å or less during the low temperature anneal process,caused by diffusion of germanium downwards into the workpiece 202.Advantageously, because the anneal process to re-crystallize theamorphous implantation region 230 and repair the damaged region 234 isat a low temperature, the depth d₄ is not increased much (e.g., onlyabout 20 Å or less) during the low temperature anneal process.

Regions of the workpiece 202 (not shown) may then be implanted for aV_(T) threshold voltage, for example. An anti-punch-through implant maythen be performed on portions of the workpiece 202, also not shown.Alternatively, the V_(T) and anti-punch-through implants may beperformed on the workpiece 202 before the germanium implant, inaccordance with a preferred embodiment of the present invention. Theworkpiece 202 may then be exposed to another pre-gate cleaning ortreatment comprising a HF, HCl or ozone based cleaning treatment, asexamples, to remove any particulates, contaminates, or native oxideparticles disposed on the germanium implantation region 238 in thechannel region C, for example.

A gate dielectric material 240 is deposited over the workpiece 202, asshown in FIG. 4. The gate dielectric material 240 may be also depositedbefore annealing the workpiece, to be described herein with reference toFIGS. 6-8. Referring again to FIG. 4, in one embodiment, the gatedielectric material 240 preferably comprises a high k material having adielectric constant of 4.0 or greater. In this embodiment, the gatedielectric material 240 preferably comprises HfO₂, HfSiO_(X), Al₂O₃,ZrO₂, ZrSiO_(X), Ta₂O₅, La₂O_(3, Si) _(x)N_(y) or SiON, as examples,although alternatively, the gate dielectric material 240 may compriseother high k insulating materials. The gate dielectric material 240 maycomprise a single layer of material, or alternatively, the gatedielectric material 240 may comprise two or more layers. In oneembodiment, one or more of these materials can be included in the gatedielectric material 240 in different combinations or in stacked layers.The gate dielectric material 240 may be deposited by chemical vapordeposition (CVD), atomic layer deposition (ALD), metal organic chemicalvapor deposition (MOCVD), physical vapor deposition (PVD), or jet vapordeposition (JVP), as examples, although alternatively, the gatedielectric material 240 may be deposited using other suitable depositiontechniques. The gate dielectric material 240 preferably comprises athickness of about 10 Å to about 60 Å in one embodiment, althoughalternatively, the gate dielectric material 240 may comprise otherdimensions, such as 80 Å or less, as an example.

Embodiments of the present invention are particularly advantageous whenused in transistor designs having high dielectric constant materials forthe gate dielectric material 240, because a concern with high dielectricconstant gate materials is reducing the effective gate oxide thickness,which advantageously is reduced by embodiments of the present invention.Furthermore, transistors having high-k gate dielectrics typically havelower electron and hole mobility than transistors utilizing moretraditional gate dielectric materials, such as SiO₂ or SiON, and thus,this is another reason that embodiments of the invention areadvantageous for use with high k gate dielectric materials. However,embodiments of the present invention also have useful application intransistor designs having more traditional gate dielectric materials,such as SiO₂ or SiON, as examples.

A gate material 242 is deposited over the gate dielectric material 240.The gate material 242 preferably comprises a conductor, such as a metalor polysilicon, although alternatively, other conductive andsemiconductive materials may be used for the gate material 242. Forexample, the gate material 242 may comprise TiN, HfN, TaN, a fullysilicided gate material (FUSI), or other metals, as examples. The gatematerial 242 may comprise a plurality of stacked gate materials, such asa metal underlayer with a polysilicon cap layer disposed over the metalunderlayer, or a combination of a plurality of metal layers that form agate electrode stack. Alternatively, in another embodiment, the gatematerial 242 may comprise polysilicon or other semiconductor materials.The gate material 242 may be deposited using CVD, PVD, ALD, or otherdeposition techniques, as examples. The gate material 242 preferablycomprises a thickness of about 1500 Å, although alternatively, the gatematerial 242 may comprise about 1000 Å to about 2000 Å, or otherdimensions, for example.

The gate material 242 and the gate dielectric material 240 are patternedusing a lithography technique to form a gate 242 and a gate dielectric240 of a transistor, as shown in FIG. 5. For example, a photoresist (notshown) may be deposited over the workpiece 202. The photoresist may bepatterned with a desired pattern for the gate and gate dielectric, andthe photoresist may be used as a mask while the gate material 242 andthe gate dielectric material 240 are etched to form the gate material242 and gate dielectric material 240 into the desired pattern. Thephotoresist is then stripped or removed.

Note that a thin interfacial layer 244 is likely to be formed during thedeposition of the gate dielectric material 240, or during a cleaningtreatment such as a wet pre-clean, prior to the gate dielectric material240 deposition, as examples. This thin interfacial layer 244 typicallycomprises a thickness of about 7 Å or less. The thin interfacial layer244 forms by the reaction of silicon or other semiconductor material inthe workpiece 202 with an oxide in the gate dielectric material 240 orpre-clean process. Advantageously, the thickness of the thin interfaciallayer 244 is minimized by the presence of germanium (e.g., at 230 a) inthe top surface of the workpiece 202, and also because only lowtemperature anneal processes are used in the manufacturing process fromthis point forward. A thin interfacial layer may also be formed betweenthe gate 242 and the gate dielectric 240 (not shown in FIG. 5; see FIG.8).

Next, in accordance with a preferred embodiment of the presentinvention, a source region S and drain region D are then formedproximate the channel region C, as shown in FIG. 5. More particularly,the source region S and the drain region D are preferably formed in atleast the crystalline germanium implantation region 238, as shown. Forexample, the source region S and the drain region D may also extendthrough the crystalline germanium implantation region 238 into theworkpiece 202 below the crystalline germanium implantation region 238(not shown). The source region S and drain region D may be formed usingan optional extension implant, which may comprise implanting dopantsusing a low energy implant at about 200 eV to 1 keV, for example, toform extension regions 220. A spacer material such as silicon nitride orother insulator, as examples, is deposited over the entire workpiece202, and then the spacer material is etched using an etch process suchas an anisotropic etch, leaving the spacers 248 disposed over sidewallsof the gate dielectric 240 and gate 242, as shown. Alternatively, thespacers 248 may be more rectangular-shaped and may be patterned using aphotoresist as a mask, as an example, not shown.

To complete the implantation of the source S and drain D regions, asecond dopant implantation process is then performed on exposed portionsof the germanium implantation region 238, preferably using a slightlyhigher energy implantation process than was used for the extensionregions 220. For example, the second implantation process may be atabout 5 keV to 20 keV. A low-temperature temperature anneal may then beperformed to drive in and activate the dopant of the extension regions220 and the source S and drain D regions. The low-temperature anneal ispreferably performed at a temperature of less than 938.3° C. to avoiddamaging the germanium in the germanium implantation region 238, forexample.

The doped regions of the source S and drain D and extension regions 220extend beneath the spacers 248 and also extend laterally beneath thegate 242 and gate dielectric 240 by about 100 Å or less, as shown inFIG. 5. The low-temperature anneal process to form the source S anddrain D preferably comprises a temperature of about 938.3° C. or lessfor about 1 hour or less, and more preferably comprises a temperature ofabout 900° C. or less for about 20 minutes or less, as examples. Thedoped regions of the source S and drain D preferably comprise athickness of about 100 Å or less.

The manufacturing process for the device 200 is then continued tocomplete the device 200, preferably without subjecting the semiconductordevice 200 to high temperatures, e.g., preferably without exposing thesemiconductor device 200 to a temperature greater than about 938.3° C.

Thus, in accordance with an embodiment of the invention, a transistor250 is formed that includes a gate 242, a source S and a drain D,wherein the transistor 250 channel region C comprises a shallowcrystalline germanium implantation region 238 formed therein. Thegermanium implantation region 238 in the channel region C increases themobility of the transistor device 250. The transistor device 250 has athin effective oxide thickness 246 which includes the interfacial layer244, the high k gate dielectric 240, and a thin interfacial layerbetween the gate 242 and gate dielectric 240, if present, not shown.Advantageously, because the transistor 250 is not exposed to ahigh-temperature anneal process, e.g., temperatures of 938.3° C. orgreater, increasing the thickness of the interfacial layer 244 isavoided, thus decreasing the effective oxide thickness 246. For example,the interfacial layer 244 preferably comprises a thickness of about 2 Åto about 7 Å, and more preferably comprises a thickness of about 7 Å orless. The transistor 250 is particularly advantageous in applicationswherein a high drive current and minimal effective oxide thickness areimportant, such as in high performance (e.g., high speed) applications,for example, in use with memory and other devices.

The germanium implantation of the channel region particularly enhancesperformance of devices with high-k gate stack Ge oxides (such as GeO₂ orGeO), which are unstable as compared to Si oxides. By having Ge at theworkpiece 232 surface, the bottom interfacial layer 244, which primarilycomprises Si oxide, between Si substrate 238 and high-k dielectric 240is reduced in thickness and hence, a smaller EOT is achievable for thetransistor device 250, which is advantageous in both low power and highperformance applications. In addition, Ge segregates near the workpiecetop surface 232, proximate the interfacial oxide 244 comprising Sioxides, forming a high Ge content region at the interface (e.g., at 230a in FIG. 3). This further enhances the channel mobility of thetransistor device 250. For these reasons, the Ge channel implant processdescribed herein is particularly advantageous in high-k gate stack 240applications.

FIGS. 6 through 8 show cross-sectional views of another embodiment ofthe present invention, in which a similar process flow may be used aswas described for FIGS. 2 through 5. Similar reference numbers aredesignated for the various elements in FIGS. 6 through 8 as were used inFIGS. 2 through 5. To avoid repetition, each reference number shown inthe figure is not described again in detail herein. Rather, similarmaterials and thicknesses described for x02, x04, etc . . . arepreferably used for the material layers shown as were described forFIGS. 2 through 5, where x=2 in FIGS. 2 through 5 and x=3 in FIGS. 6through 8. As an example, the preferred and alternative materials listedfor the high k gate dielectric material 240 in the description for FIGS.2 through 5 are preferably also used for the high k gate dielectricmaterial 340 in FIGS. 6 through 8.

As shown in FIG. 6, in this embodiment, the gate dielectric material 340is deposited before the low-temperature anneal process, immediatelyafter the shallow implantation process to form the amorphous germaniumimplantation region 330 proximate the top surface 332 of the workpiece302, and a crystalline germanium implantation region 336 disposedbeneath the amorphous germanium implantation region 330. An advantage ofthis embodiment is that Ge is maintained at the maximum level because Geout-diffusion is blocked by the gate dielectric 340. The gate dielectric240 functions as a cap layer during the low temperature anneal process,in this embodiment. For example, in the embodiment shown in FIGS. 2through 5, in the low temperature anneal process after implantinggermanium, Ge may out-diffuse upwards into the ambient (e.g., it mayevaporate). However, by having the gate dielectric 340 disposed over theworkpiece top surface 332 during the low-temperature anneal, Ge isprevented from leaving from the top surface 332 of the workpiece 302.FIG. 7 shows a more detailed view of the channel region C of FIG. 6.

Note than in accordance with embodiments of the present invention, thetop portion 330 a of the amorphous germanium implantation region 330 mayadvantageously comprise substantially 100% germanium. This isadvantageous because germanium oxide (GeO2) is not stable and does nothave a strong tendency to form, as does SiO2. Therefore, by having a toplayer 330 a of 100% germanium, the thickness of interfacial oxide 344formed is minimal, e.g., 4 Å or less, shown in FIG. 8, andalternatively, no interfacial oxide 344 may be formed at all between thehigh k gate dielectric 340 and the germanium implantation region 338(not shown in the figures). Note that an interfacial oxide 352 may alsobe formed between high k gate dielectric 340 and the gate electrode 342,as shown in FIG. 8. Note also that the transistor 360 may not includeshallow extension regions in the source S and drain D regions, butrather, the source S and drain D region may comprise an extension regionthat extends laterally beneath a portion of the gate dielectric 340 andthe gate electrode 342.

Experimental Results

Experiments show that a low energy shallow implant of germanium in achannel region of a transistor device having a high k dielectric resultin transistors having increased transconductance and increasedsaturation current, indicating that the transistors have increasedmobility in the channel region. The transistors also had a measurablelower EOT.

Experimental results of implementing embodiments of the presentinvention will next be described, with the manufacturing steps beinglisted sequentially, and with reference to FIGS. 6-8. CMOS devicescomprising NMOS and PMOS transistors having germanium-implanted channelregions were fabricated. A control wafer was also fabricated, using thesame materials, dimensions, and manufacturing processes, but not havinga germanium implant in the channel region. Germanium was implanted intothe top surfaces 332 of workpieces 302 of the experimental wafers atenergy levels ranging from 0.5 keV to 4 keV at doses ranging from 5×10¹⁵to 1×10¹⁶ Ge atoms/cm². A gate dielectric 340 comprising 45 Å of 20%HfSiOx (20% SiO₂ and 80% HfO₂) was deposited over the workpieces 302.The workpieces 302 were annealed at 700° C. in a NH₃ ambient for 60seconds. A gate material 342 comprising 100 Å of TiN and asubsequently-deposited 1800 Å layer of polysilicon was formed over thegate dielectric 340. The gate material 342 and the gate dielectric 340were patterned to form a gate 342 and gate dielectric 340. Source anddrain regions S/D were formed by implanting As for the NMOS devices, andby implanting BF₂ for the PMOS devices, and annealing the workpieces 302at 900° C. for 60 seconds.

The electrical performance of transistors 360 having germanium implantedin the channel region C was compared to transistors having no germaniumimplant in the channel region. The electrical effective oxide thickness(EOT) of transistors 360 having a shallow germanium implant in thechannel was lower on average by about 10%, and was lower by 1.1 Å in oneinstance than the control wafer. The saturation current andtransconductance were higher in the Ge-implanted wafers than in thecontrol wafers by about 20%. For example, the saturation current of oneGe-implanted wafer was 5.175 μamperes/μm, compared to 4.525 μamperes/μmfor the control wafer. The transconductance was 17.5 μSiemens/μm of oneGe-implanted wafer, compared to 16.2 μSiemens/μm for the control wafer.The electron mobility of Ge wafers was slightly higher for the controlwafer, by about 5%. As an example, the mobility was 89.6cm²/voltage-seconds for one Ge-implanted wafer and the mobility was 86.1cm²/voltage-seconds for the control wafer. Optimal performance ofgermanium-implanted channel transistors 360 was seen when the germaniumimplantation process comprised 2 keV at a dose of 1×10¹⁶ atoms/cm²germanium.

Note that in the experimental results described herein, the anneal wasperformed in an ammonia ambient, however, in a preferred embodiment, thelow energy germanium implantation process comprises other ambient gasessuch as N₂.

The order of the manufacturing process steps described herein may bealtered. For example, in a preferred embodiment, the workpiece ispreferably subjected to a pre-gate clean immediately before thegermanium implant, to minimize the amount of native oxide present on theworkpiece surface prior to the germanium implant, thus increasing theconcentration of germanium implanted in the top surface of theworkpiece. Alternatively, the pre-gate clean may be performed at otherstages in the manufacturing process. In one preferred embodiment, theprocess steps are completed in the following order: form field oxideregions 204 in a workpiece 202, implant V_(T) implants, implantanti-punch-through implants, pre-gate clean, implant shallow germaniumregions in channel region C as described herein, deposit gate dielectric240/340, low-temperature anneal, deposit gate material 242/342, patterngate 242/342 and gate dielectric 240/340, implant source/drain extensionimplants, form spacers, and form deep source and drain regions S/D.

Advantages of preferred embodiments of the present invention includeproviding transistor designs 250 and 360 and methods of manufacturethereof, having a channel region C with a shallow germanium implantationregion 238 and 338 formed therein. The germanium is implanted using alow energy and high dopant concentration process. Amorphous regions 230and 330 and damaged areas 234 and 334 are re-crystallized and repaired,respectively, using a low temperature anneal process. Electron and holemobility in the channel region C is increased, and the effective oxidethickness 246 and 346 is minimized, due to the high concentration ofgermanium at the top surface 232 and 332 of the workpiece 202 and 302,which minimizes interfacial oxide 244 and 344 formation.

Because a low-temperature anneal process is used to re-crystallize theamorphous germanium implant regions 230 and 330 and also to form thesource S and drain D region, the effective oxide thicknesses 246 and 346of the gate dielectric 240 and 340 are not substantially increased,resulting in a thinner effective gate dielectric thickness (or effectiveoxide thickness (EOT), 246 and 346, which comprises the total thicknessof any thin interfacial oxide layers 244, 344 and 352 and gatedielectric 240 and 340, respectively. The transistors 250 and 360described herein benefit from a reduced thermal budget and improved gatequality.

Another advantage of embodiments of the present invention is the abilityto implant germanium in a plurality of wafers or workpieces 202 and 302at a single time, e.g., using batch dopant implantation processing toolsthat are commonly found in semiconductor manufacturing facilities. Inone preferred embodiment, the gate dielectric material 340 is formedover the channel region C before the low temperature anneal process tore-crystallize amorphous germanium-implanted region in the workpiece302, so that the gate dielectric material 340 acts as a capping layer,preventing germanium from outdiffusing or evaporating from the topsurface of the workpiece 302, and resulting in an increase in thegermanium concentration at the top surface 332 of the workpiece 302.

Again, only one transistor is shown in each figure. However, a pluralityof transistors may be formed simultaneously in accordance withembodiments of the present invention, not shown. Furthermore, PMOS andNMOS transistors may be fabricated on a single workpiece, by maskingportions of the workpiece while other portions are processed.

Although embodiments of the present invention and their advantages havebeen described in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the invention as defined by the appended claims.For example, it will be readily understood by those skilled in the artthat many of the features, functions, processes, and materials describedherein may be varied while remaining within the scope of the presentinvention. Moreover, the scope of the present application is notintended to be limited to the particular embodiments of the process,machine, manufacture, composition of matter, means, methods and stepsdescribed in the specification. As one of ordinary skill in the art willreadily appreciate from the disclosure of the present invention,processes, machines, manufacture, compositions of matter, means,methods, or steps, presently existing or later to be developed, thatperform substantially the same function or achieve substantially thesame result as the corresponding embodiments described herein may beutilized according to the present invention. Accordingly, the appendedclaims are intended to include within their scope such processes,machines, manufacture, compositions of matter, means, methods, or steps.

1. A method of fabricating a transistor, the method comprising:providing a workpiece, the workpiece having a top surface; implantinggermanium into the top surface of the workpiece so that the highestconcentration of germanium is at the top surface of the workpiece withthe concentration gradually decreasing as the distance from the topsurface increases, said implanting further forming a firstgermanium-containing region extending from the top surface of theworkpiece, said forming a first germanium-containing region comprisesforming an amorphous germanium-containing region, and forming a secondgermanium-containing region beneath the first germanium-containingregion, said forming a second germanium-containing region comprisesforming a first crystalline germanium-containing region, the firstgermanium-containing region extending a first depth beneath theworkpiece top surface, the second germanium-containing region having asecond depth extending below the first depth, the first and second depthcomprising about 100 Å or less below the top surface of the workpiece;depositing a gate dielectric material over the firstgermanium-containing region; depositing a gate material over the gatedielectric material; patterning the gate material and gate dielectricmaterial to form a gate and a gate dielectric over the firstgermanium-containing region; and forming a source region and a drainregion in at least the first germanium-containing region.
 2. The methodaccording to claim 1, further comprising annealing the workpiece, beforedepositing the gate dielectric material, converting the amorphousgermanium-containing region to a second crystalline germanium-containingregion, the first crystalline germanium-containing region and the secondcrystalline germanium-containing region comprising a single crystallinegermanium-containing region, the single crystalline germanium-containingregion composing a third depth beneath the workpiece top surface.
 3. Themethod according to claim 2, wherein the third depth is about 120 Å orless.
 4. The method according to claim 2, wherein the first depth isabout 45 Å or less, and the second depth is about 55 Å or less.
 5. Themethod according to claim 2, wherein annealing the workpiece comprisesheating the workpiece to a temperature of about 750° C. or less forabout 60 minutes or less.
 6. The method according to claim 1, furthercomprising annealing the workpiece, after depositing the gate dielectricmaterial, converting the amorphous germanium-containing region to asecond crystalline germanium-containing region, the first crystallinegermanium-containing region and the second crystallinegermanium-containing region comprising a single crystallinegermanium-containing region, the single crystalline germanium-containingregion comprising a third depth beneath the workpiece top surface. 7.The method according to claim 6, wherein the third depth is about 120 Åor less.
 8. The method according to claim 6, wherein the first depth isabout 45 Å or less, and the second depth is about 55 Å or less.
 9. Themethod according to claim 6, wherein annealing the workpiece comprisesheating the workpiece to a temperature of about 750° C. or less forabout 60 minutes or less.
 10. The method according to claim 1, whereinimplanting germanium into the top surface of the workpiece comprisesforming a damage region between the first germanium-containing regionand the second germanium-containing region, further comprising annealingthe workpiece, converting the amorphous germanium-containing region to asecond crystalline germanium-containing region, the first crystallinegermanium-containing region and the second crystallinegermanium-containing region comprising a single crystallinegermanium-containing region, and wherein annealing the workpiece causesthe removal of the damaged region between the first germanium-containingregion and the second germanium-containing region.
 11. The methodaccording to claim 1, wherein implanting the germanium comprisesimplanting germanium at an energy dose of about 5 keV or less.
 12. Themethod according to claim 1, wherein implanting the germanium comprisesimplanting germanium at a dose of about 1×10¹⁵ to 1×10¹⁷ atoms/cm². 13.The method according to claim 1, wherein the step of implanting thegermanium into said first germanium-containing region comprisingimplanting a portion of said first germanium containing region with atleast 80% germanium.
 14. The method according to claim 13, wherein thestep of implanting the germanium into said first germanium-containingregion comprising implanting a portion of said first germaniumcontaining region with substantially 100% germanium.
 15. The methodaccording to claim 1, wherein depositing the gate dielectric materialcomprises depositing a material having a dielectric constant of about4.0 or greater.
 16. The method according to claim 15, wherein thedepositing the gate dielectric material comprises depositing HfO₂,HfSiO_(x), Al₂O₃, ZrO₂, ZrSiO_(x), Ta₂O₅, La₂O₃, Si_(x)N_(y), SiON, orcombinations thereof.
 17. The method according to claim 1, whereindepositing the gate dielectric material comprises depositing SiO₂. 18.The method according to claim 1, further comprising forming isolationregions in the workpiece, before implanting germanium into the topsurface of the workpiece.
 19. The method according to claim 1, furthercomprising forming spacers over sidewalls of the gate and gatedielectric.
 20. The method according to claim 1, wherein providing theworkpiece comprises providing a silicon-on-insulator (SOI) wafer. 21.The method according to claim 1, wherein forming the source and drainregions comprises a temperature of about 938.3° C. or less.